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QBU/QBY-series Pockels Cell Drivers

Product details

QBU-series Pockels cell drivers have higher performance and wider functionality than QBD-series drivers and may be used for advanced beam control. Main parameters/features are as follows:

  • Extremely flexible topology
  • Duplicates at its High-Voltage Output the external driving TTL signal
  • HV push-up and pull-down configurations
  • Up to 6 kV output voltage
  • Up to 100 kHz Pulse Repetition Rate
  • <15 nsec (~10 nsec typ.) rise- and fall times
  • Compact OEM design
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Product Description

QBU-series Pockels cell drivers

QBU-series consist of several Pockels cell drivers differ with their output voltage range (see also How to order? section) and covering range up to 6.0 kV.

Modules have fast transition times in both directions and repeat at their output external driving TTL signal. As a result, they may be used for Q-switched lasers of HV push-up scheme, pull-down scheme as well for mixed-type, or another user-defined scheme.

Under conditions of appropriate forced air cooling, low load capacitance and low operating voltage modules may achieve performance up to 100 kHz.

Performance

For instance, QBU-5020 run with proper load (Pockels cell with 5-7 pF capacitance plus <20 cm long HV leads), and under condition of appropriate cooling has typical performance as shown in the table below:

Output voltage, kV Repetition rate, kHz (*)
2.00 90-110
3.00 50-60
4.00 28-38
5.00 18-26
  • (*) Values are approximate, exact performance depends on actual load capacitance and cooling conditions.
  • In burst mode (i.e. for short term operations) the performance increases by approximately a factor of 2, and exceeds 100 kHz at low operating voltages and low load capacitances.
  • Higher load capacitance decreases the performance.
Applications
  • Q-switching, Pulse Slicing, Pulse Picking
Technical Specifications
INPUT
Voltage +24 VDC
OUTPUT
Working modes repetition of external low voltage signal
Voltage, high level regulated, up to 6 kV1
Voltage, low level fixed, 0 V
Pulse width 200 nsec – DC
Repetition rate up to 50 kHz (CW), up to 100 kHz (burst-mode)1, 2
Rise time (fall time) < 15 nsec (~10 nsec typ.)3
Jitter 10 nsec (1 nsec in LJ-modification)
Delay time 1 µsec (100 nsec in LJ-modification)
Load capacitance up to 0.5 nF1
ENVIRONMENT
Operational Temperature +10 °C to +40 °C (wider range on request)
Storage Temperature ‐20 °C to +60 °C
Humidity 90%, non-condensing
PHYSICAL
Exterior Dimensions (LxWxH) 130x80x25 mm
Weight 0.1 kG

1 these parameters aren’t independent, and cannot achieve their maximum at the same time;
2 forced air cooling is required when operating at high repetition rates;
3 10-90% level, warranted at load capacitance 11 pF and below.

How To Order

Voltage Modifications

Model* Description*
QBU-6024 2.4-6.0 kV high voltage adjustment range
QBU-5020 2.0-5.0 kV high voltage adjustment range
QBU-4016 1.6-4.0 kV high voltage adjustment range
QBU-3012 1.2-3.0 kV high voltage adjustment range
QBU-2008 0.8-2.0 kV high voltage adjustment range
QBU-1004 0.4-1.0 kV high voltage adjustment range
(*) Other output voltages are available on request
Other Options:
LJ- Low-Jitter Option
Example:
QBU-5020-LJ 2.0-5.0 kV high voltage adjustment range
Low jitter option
Products in this series:
QBU-nano avalanche transistor Pockels Cell Driver